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C1002 AD8531AR MS4208L6 2SC5097 A1695 BC846B 25A12 MJD31T4G
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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD687
DESCRIPTION With TO-220C package Low collector saturation voltage DARLINGTON High DC current gain APPLICATIONS Switching applications Hammer drive,pulse motor drive Power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION
Maximum absolute ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER
TOR NDU ICO E SEM ANG INCH
Emitter CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae Open base Open collector 40 5 3 25 150 -50~150
UNIT V V V A W ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A; IB=4mA IC=2A; IB=4mA VCB=60V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V 2000 1000 MIN 40 TYP.
2SD687
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
MAX
UNIT V
1.5 2.0 20 2.5 |I
V V A mA
Switching times ton ts tf
TOR NDU ICO E SEM ANG INCH
Turn-on time Storage time 0.1 IB1=-IB2=6mA VCC=30V;RL=10| 1.0 |I Fall time 0.2
|I
s s
|I
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD687
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm)
3


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